fundamentals of power electronics nptel assignment answers

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Fundamentals of Power Electronics

NPTEL and Indian Institute of Technology Bombay via YouTube Help

COURSE OUTLINE: The course introduces the basics of power electronic devices and converters. Basic working principles, operating modes and analysis of DC-DC, DC-AC, AC-DC, and AC-AC converters would be covered. Control of power electronic converters is explained. Certain specialized concepts in power electronics like matrix converter, active rectifiers, space vector modulation would be included.

ABOUT INSTRUCTOR: He received the B.Sc. degree (Hons.) in physics from St. Stephen’s College, Delhi University, Delhi, India, in 1985; the M.E. degree in electrical engineering from the Indian Institute of Science, Bangalore, India, in 1990; and the Ph.D. degree in electrical engineering from the University of Victoria, Victoria, Canada, in 1994.

Introduction to the Course "Fundamentals of Power Electronics" by Prof Vivek Agarwal. Week 1-Lecture 1. Week 1-Lecture 2. Week 1-Lecture 3. Week 1-Lecture 4. Week 1-Lecture 5. Week 2-Lecture 6. Week 2-Lecture 7. Week 2-Lecture 8. Week 3-Lecture 9. Week 3-Lecture 10. Week 3-Lecture 11. Circuit Operation. Designing the circuit. Simulation setup for NgSpice and gEDA schematic capture. Simulating the circuit. Practicals. wk05 01. wk05 02. wk05 03. wk05 04. wk05 05. wk05 06. wk05 07. wk05 08. wk05 09. wk05 10. wk05 11. wk05 12. wk05 13. wk05 14. w6 01. w6 02. w6 03. w6 05. w6 06. w6 07. w6 08. w6 09. w6 10. w6 11. w6 12. w6 13. w6 14. w7 01. w7 02. w7 03. w7 04. w7 05. w7 06. w7 07. w7 08. w7 09. w8 01. w8 02. w8 03. w8 04. w8 05. w8 06. w8 07. w9 01. w9 02. w9 03. w9 04. w9 05. w9 06. w9 08. w9 09. w9 10. w10 01. w10 02. w10 03. w10 04. w10 05. w10 06. w10 07. w10 08. w10 09. w11 01. w11 02. w11 03. w11 04. w11 05. w11 06. w11 07. w11 08. w11 09. w11 10. w12 01. w12 02. w12 03. w12 04. w12 05. w12 06. w12 07. w12 08. w12 09.

IIT Bombay July 2018

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Digital Control in Switched Mode Power Converters and FPGA-based Prototyping

--> --> --> --> --> --> --> --> --> --> --> --> --> --> --> --> --> -->

Note: This exam date is subject to change based on seat availability. You can check final exam date on your hall ticket.

Page Visits

Course layout, books and references.

• S. Kapat and P. T. Krein, ""A Tutorial and Review Discussion of Modulation, Control and Tuning of High­ Performance DC-DC Converters based on Small-Signal and Large-Signal Approaches"" IEEE Open Journal of Power Electronics , vol. 1, pp. 339 - 371, Aug. 2020.
• R. W. Erickson and D. Maksimovic, Fundamentals of Power Electronics, 3rd Ed., Springer, 2020.

Instructor bio

Prof. Santanu Kapat

Course certificate.

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• Electrical Engineering
• NOC:Fundamentals of semiconductor devices (Video) 
• Co-ordinated by : IISc Bangalore
• Available from : 2018-11-20
• Intro Video
• Introduction to semiconductors
• Introduction to energy bands
• Fundamentals of band structure
• Band structure (contd.) and Fermi-Dirac distribution
• Density of states
• Doping and intrinsic carrier concentration
• Equilibrium carrier concentration
• Temperature-dependence of carrier concentration
• High doping effects and incomplete ionization
• Carrier scattering and mobility
• Low-field and high-field transport, introduction to diffusion
• Drift-diffusion and trap statistics
• Current continuity equation
• Continuity equation (contd.) and introduction to p-n junction
• p-n junction under equilibrium
• p-n junction under equilibrium (contd.)
• p-n junction under bias
• p-n junction under bias (contd.)
• p-n junction: generation-recombination currents
• Application of p-n junctions
• Breakdown of junction and C-V profiling
• Introduction to Schottky junction
• Schottky junction under equilibrium
• Schottky junction under bias
• Introduction to transistors: BJT
• Basics of BJT
• Working of BJT
• Working of BJT (contd)
• Delays in BJT
• MOS: Introduction
• MOS: Capacitance-voltage
• Ideal MOS system: derivation of threshold voltage
• MOS C-V in more details
• MOSFET – An introduction
• Gradual Channel Approximation: Derivation of I-V characteristics
• Substrate bias effect and subthreshold conduction in MOSFET
• Short Channel Effects in MOSFET
• Introduction to compound semiconductors
• Basics of heterojunctions
• Band diagram of heterojunctions
• Heterojunctions (contd).
• Heterojunction transistors
• III-nitrides
• Solar cell basics
• Solar cell (contd.)
• Solar cell: Shockley Quiesser Limit
• Basics of photodetectors
• Photodetectors: figures of merit and types of devices
• Junction photodetectors
• Basics of recombination
• Basics of LED
• LED: light extraction and design issues
• Visible LED: photometry and colorimetry
• Transistors for power electronics
• Transistors for power electronics (contd.) & for RF electronics
• Transistors for RF (contd.) and transistors for Memory
• Basics of microelectronic fabrication
• Microelectronic fabrication (contd.)
• Watch on YouTube
• Assignments
• Download Videos
• Transcripts

Course Status :	Completed
Course Type :	Elective
Duration :	12 weeks
Category :
Credit Points :	3
Undergraduate/Postgraduate
Start Date :	25 Jul 2022
End Date :	14 Oct 2022
Enrollment Ends :	08 Aug 2022
Exam Date :	30 Oct 2022 IST

Sl.No	Chapter Name	MP4 Download
1	Introduction to semiconductors
2	Introduction to energy bands
3	Fundamentals of band structure
4	Band structure (contd.) and Fermi-Dirac distribution
5	Density of states
6	Doping and intrinsic carrier concentration
7	Equilibrium carrier concentration
8	Temperature-dependence of carrier concentration
9	High doping effects and incomplete ionization
10	Carrier scattering and mobility
11	Low-field and high-field transport, introduction to diffusion
12	Drift-diffusion and trap statistics
13	Current continuity equation
14	Continuity equation (contd.) and introduction to p-n junction
15	p-n junction under equilibrium
16	p-n junction under equilibrium (contd.)
17	p-n junction under bias
18	p-n junction under bias (contd.)
19	p-n junction: generation-recombination currents
20	Application of p-n junctions
21	Breakdown of junction and C-V profiling
22	Introduction to Schottky junction
23	Schottky junction under equilibrium
24	Schottky junction under bias
25	Introduction to transistors: BJT
26	Basics of BJT
27	Working of BJT
28	Working of BJT (contd)
29	Delays in BJT
30	MOS: Introduction
31	MOS: Capacitance-voltage
32	Ideal MOS system: derivation of threshold voltage
33	MOS C-V in more details
34	MOSFET – An introduction
35	Gradual Channel Approximation: Derivation of I-V characteristics
36	Substrate bias effect and subthreshold conduction in MOSFET
37	Short Channel Effects in MOSFET
38	Introduction to compound semiconductors
39	Basics of heterojunctions
40	Band diagram of heterojunctions
41	Heterojunctions (contd).
42	Heterojunction transistors
43	III-nitrides
44	Solar cell basics
45	Solar cell (contd.)
46	Solar cell: Shockley Quiesser Limit
47	Basics of photodetectors
48	Photodetectors: figures of merit and types of devices
49	Junction photodetectors
50	Basics of recombination
51	Basics of LED
52	LED: light extraction and design issues
53	Visible LED: photometry and colorimetry
54	Transistors for power electronics
55	Transistors for power electronics (contd.) & for RF electronics
56	Transistors for RF (contd.) and transistors for Memory
57	Basics of microelectronic fabrication
58	Microelectronic fabrication (contd.)
59	Summary

Sl.No	Chapter Name	English
1	Introduction to semiconductors
2	Introduction to energy bands
3	Fundamentals of band structure
4	Band structure (contd.) and Fermi-Dirac distribution
5	Density of states
6	Doping and intrinsic carrier concentration
7	Equilibrium carrier concentration
8	Temperature-dependence of carrier concentration
9	High doping effects and incomplete ionization
10	Carrier scattering and mobility
11	Low-field and high-field transport, introduction to diffusion
12	Drift-diffusion and trap statistics
13	Current continuity equation
14	Continuity equation (contd.) and introduction to p-n junction
15	p-n junction under equilibrium
16	p-n junction under equilibrium (contd.)
17	p-n junction under bias
18	p-n junction under bias (contd.)
19	p-n junction: generation-recombination currents
20	Application of p-n junctions
21	Breakdown of junction and C-V profiling
22	Introduction to Schottky junction
23	Schottky junction under equilibrium
24	Schottky junction under bias
25	Introduction to transistors: BJT
26	Basics of BJT
27	Working of BJT
28	Working of BJT (contd)
29	Delays in BJT
30	MOS: Introduction
31	MOS: Capacitance-voltage
32	Ideal MOS system: derivation of threshold voltage
33	MOS C-V in more details
34	MOSFET – An introduction
35	Gradual Channel Approximation: Derivation of I-V characteristics
36	Substrate bias effect and subthreshold conduction in MOSFET
37	Short Channel Effects in MOSFET
38	Introduction to compound semiconductors
39	Basics of heterojunctions
40	Band diagram of heterojunctions
41	Heterojunctions (contd).
42	Heterojunction transistors
43	III-nitrides
44	Solar cell basics
45	Solar cell (contd.)
46	Solar cell: Shockley Quiesser Limit
47	Basics of photodetectors
48	Photodetectors: figures of merit and types of devices
49	Junction photodetectors
50	Basics of recombination
51	Basics of LED
52	LED: light extraction and design issues
53	Visible LED: photometry and colorimetry
54	Transistors for power electronics
55	Transistors for power electronics (contd.) & for RF electronics
56	Transistors for RF (contd.) and transistors for Memory
57	Basics of microelectronic fabrication
58	Microelectronic fabrication (contd.)
59	Summary

Sl.No	Language	Book link
1	English
2	Bengali	Not Available
3	Gujarati	Not Available
4	Hindi	Not Available
5	Kannada	Not Available
6	Malayalam	Not Available
7	Marathi	Not Available
8	Tamil	Not Available
9	Telugu	Not Available